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Philips Semiconductors
Product specification
NPN high voltage Power transistor
FEATURES
* Fast switching * Excellent thermal stability * High thermal cycling performance * Low thermal resistance * Surface mounting package
BUX84S
SYMBOL
c b e
QUICK REFERENCE DATA
VCESM = 800 V VCEO = 400 V IC = 2 A VCE(SAT) 1 V (IC = 1 A) tf = 0.4 s (typ)
GENERAL DESCRIPTION
High voltage, high speed glass passivated NPN power transistor in a plastic package. Applications:Off-line SMPS TV and monitor power supplies Inverters Electronic lighting ballasts The BUX84S is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 4 base collector1 emitter DESCRIPTION
SOT428
tab
2
collector (tab)
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VCESM VCEO VEBO IC ICM IB IBM -IBM Ptot Tj, Tstg Collector-emitter voltage (peak value) Collector-emitter voltage (DC) Emitter-base voltage Collector current (DC) Collector current (peak value) Base current (DC) Base current (peak value) Reverse base current (peak value during turn-off) Total power dissipation Operating junction and storage temperature CONDITIONS VBE = 0 V base open circuit collector open circuit tp = 2 ms MIN. Tmb = 25 C - 65 MAX. 800 400 5 2 3 0.75 1 1 50 150 UNIT V V V A A A A A W C
1 It is not possible to make connection to pin:2 of the SOT428 package. February 1999 1 Rev 1.000
Philips Semiconductors
Product specification
NPN high voltage Power transistor
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted, FR4 board, minimum footprint -
BUX84S
TYP. MAX. UNIT 50 2.5 K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25C unless otherwise specified For characteristic curves, refer to BUX84 data sheet. SYMBOL PARAMETER VCEO(sust VCE(SAT) VBE(SAT) ICES IEBO hFE fT ton tf ts Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter cut-off current Emitter-base cut-off current DC current gain Transition frequency Turn-on time Fall time Storage time CONDITIONS IC = 100 mA; IB(OFF) = 0 A; L = 25 mH IC = 0.3 A; IB = 30 mA IC = 1 A; IB = 0.2 A IC = 1 A; IB = 0.2 A VCEM = 800 V; VBE = 0 V VCEM = 800 V; VBE = 0 V; Tj = 125C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA VCE = 5 V; IC = 100 mA VCE = 10 V; IC = 200 mA; f = 1 MHz IC(on) = 1 A; IB(on) = 200 mA; IB(off) = -400 mA; VCC = 250 V Tj = 25C Tj = 95C MIN. 400 15 20 TYP. MAX. UNIT 50 20 0.2 0.4 2 0.8 1 1.1 200 1.5 1 100 0.5 1.4 3.5 V V V V A mA mA
MHz s s s s
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
NPN high voltage Power transistor
MECHANICAL DATA
Plastic surface mounted package (Philips version of D-PAK); 2 leads SOT428
BUX84S
seating plane y A E b2 A A1 A2 D1
E1 D HE L2
L
L1
1
b1 e e1 b
2
wM A c
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2
2.285 4.57
Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
Fig.1. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8".
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
NPN high voltage Power transistor
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
BUX84S
7.0
2.15 2.5
1.5
4.57
Fig.2. SOT428 : soldering pattern for surface mounting.
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
February 1999
4
Rev 1.000

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